TRANSISTOR FET P/TK2302/3302

Descripción

Silicon N-Channel MOS FET. Features. • High Output Power, High Efficiency. Pout = +29.7 dBm, PAE = 68% (f = 520 MHz).

Type Designator: RQA0004PXDQS

Marking code: PX

Type of RQA0004PXDQS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3

Maximum drain-source voltage |Uds|, V: 16

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.3

Maximum junction temperature (Tj), °C: 150

Rise Time of RQA0004PXDQS transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 5

Maximum drain-source on-state resistance (Rds), Ohm: 3.4

Package: UPAK